Ultra high speed SiGe NPN for advanced BiCMOS technology

Abstract

A scalable SiGe NPN demonstrating Ft*BVceo product of 340 GHz-V with Ft of 170 GHz and BVceo of 2.0 V together with Fmax of 160 GHz is presented. Peak Ft is reached at a relatively low current density of 6 mA//spl mu/m/sup 2/. The device is integrated in a 0.18 /spl mu/m BiCMOS process with dual-gate MOS transistors, high voltage NPN transistors, MIM capacitors, metal resistors, and 6 layers of metal including two layers of thick Cu for improved interconnect and inductor performance.