A. Kalburge

Excited states and energy relaxation in stacked InAs/GaAs quantum dots

R. Heitz, A. Kalburge, Qiwei Xie et al. · Physical review. B, Condensed matter · 1998 · 239 citations

Categoryquantum Electronics, Island Formation Kinetics, Optical Materials +18

Observation of Reentrant 2D to 3D Morphology Transition in Highly Strained Epitaxy: InAs on GaAs

R. Heitz, T. Ramachandran, A. Kalburge et al. · Physical Review Letters · 1997 · 162 citations

Materials Science, Reentrant 2D, Strained Growth +13

Observation of lasing from vertically self-organized InAs three-dimensional island quantum boxes on GaAs (001)

Qiwei Xie, A. Kalburge, Peng Chen et al. · IEEE Photonics Technology Letters · 1996 · 129 citations

Categoryquantum Electronics, Photonics, Engineering +9

Realization of optically active strained InAs island quantum boxes on GaAs(100) via molecular beam epitaxy and the role of island induced strain fields

Qianghua Xie, Peng Chen, A. Kalburge et al. · Journal of Crystal Growth · 1995 · 113 citations

Strain Fields, Engineering, Physics +6

Ultra high speed SiGe NPN for advanced BiCMOS technology

M. Racanelli, K. Schuegraf, A. Kalburge et al. · 2002 · 75 citations

Thick Cu, Electrical Engineering, Engineering +12