D. W. Greve

Temperature dependence of growth of Ge<i>x</i>Si1−<i>x</i> by ultrahigh vacuum chemical vapor deposition

M. Racanelli, D. W. Greve · Applied Physics Letters · 1990 · 55 citations

Materials Science, Materials Engineering, Engineering +13

Structure of clean and arsenic-covered GaN(0001) surfaces

V. Ramachandran, C. D. Lee, R. M. Feenstra et al. · Journal of Crystal Growth · 2000 · 51 citations · Full text

Materials Science, Engineering, Surface Science +4

Indium incorporation and surface segregation during InGaN growth by molecular beam epitaxy: experiment and theory

Huajie Chen, R. M. Feenstra, John E. Northrup et al. · MRS Internet Journal of Nitride Semiconductor Research · 2001 · 51 citations · Full text

Low-temperature selective epitaxy by ultrahigh-vacuum chemical vapor deposition from SiH4 and GeH4/H2

M. Racanelli, D. W. Greve · Applied Physics Letters · 1991 · 43 citations

Engineering, Optoelectronic Devices, Vacuum Device +16

Construction and operation of an ultrahigh vacuum chemical vapor deposition epitaxial reactor for growth of Ge<i>x</i>Si1−<i>x</i>

D. W. Greve, M. Racanelli · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1990 · 39 citations

Materials Engineering, Materials Science, Engineering +12