Construction and operation of an ultrahigh vacuum chemical vapor deposition epitaxial reactor for growth of Ge<i>x</i>Si1−<i>x</i>

Abstract

An ultrahigh vacuum chemical vapor deposition system suitable for deposition of epitaxial GexSi1−x has been constructed. We report details of its construction and operation and demonstrate deposition of epitaxial silicon and GexSi1−x at temperatures as low as 577 °C. Measurements of thickness uniformity both across and between wafers are also presented.