Concepedia

Publication | Open Access

Indium incorporation and surface segregation during InGaN growth by molecular beam epitaxy: experiment and theory

DOIFull Paper Access

51

Citations

9

References

2001

Year

Huajie Chen, R. M. Feenstra, John E. Northrup, Jörg Neugebauer, D. W. Greve
MRS Internet Journal of Nitride Semiconductor Research

References

YearCitations

Page 1