C. D. Lee - Concepedia

Author

C. D. Lee

Carnegie Mellon University

Also Known As

C. D. LEE, C. D. Lee, C.D Lee, C.D. Lee, Cheolbae Lee, Cinwoo Lee

Publications

464

Citations

H-Index

Concepts

All Affiliations

Carnegie Mellon University University at Albany, State University of New York University of Maryland, College Park Palo Alto Research Center University of Pittsburgh

About

C. D. Lee is an author at Carnegie Mellon University specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	10	10	429
2	Applied Physics	10	10	429
3	Materials Science	9	9	371
4	Materials Engineering	7	7	252
5	Electrical Engineering	3	3	134

C. D. Lee

Publications

429

Citations

H-Index

Page 1

	Year	Citations
Reconstructions of the AlN(0001) surface C. D. Lee, R. M. Feenstra, John E. Northrup, Physical review. B, Condensed matter Materials ScienceAluminium NitrideSurface CharacterizationEngineeringTunneling Microscopy	2003	78
Role of Ga flux in dislocation reduction in GaN films grown on SiC(0001) C. D. Lee, Ashutosh Sagar, R. M. Feenstra, Applied Physics Letters Materials EngineeringMaterials ScienceElectrical EngineeringGa FluxX-ray Rocking Curve	2001	64
Growth of GaN on porous SiC and GaN substrates C. K. Inoki, T. S. Kuan, C. D. Lee, Journal of Electronic Materials Materials EngineeringElectrical EngineeringGan SubstratesEngineeringApplied Physics	2003	58
Structure of clean and arsenic-covered GaN(0001) surfaces V. Ramachandran, C. D. Lee, R. M. Feenstra, Journal of Crystal Growth Materials ScienceEngineeringSurface ScienceApplied PhysicsArsenic-covered Gan	2000	51
Step formation on hydrogen-etched 6H-SiC{0001} surfaces S. Nie, C. D. Lee, R. M. Feenstra, Surface Science Materials ScienceEngineeringSurface AnalysisSurface ScienceApplied Physics	2008	48
Morphology and effects of hydrogen etching of porous SiC Ashutosh Sagar, C. D. Lee, R. M. Feenstra, Journal of Applied Physics Materials ScienceMaterials EngineeringPore StructureEngineeringPorous Network	2002	46
Properties of GaN epitaxial layers grown on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy C. D. Lee, V. Ramachandran, Ashutosh Sagar, Journal of Electronic Materials Materials EngineeringMaterials ScienceSemiconductor TechnologyEngineeringApplied Physics	2001	36
Growth of Gan on Porous Sic Substrates by Plasma-Assisted Molecular Beam Epitaxy C. K. Inoki, T. S. Kuan, C. D. Lee, MRS Proceedings Materials EngineeringMaterials ScienceSemiconductor TechnologyWide-bandgap SemiconductorEngineering	2002	19
SURFACE MORPHOLOGY OF <font>GaN</font> SURFACES DURING MOLECULAR BEAM EPITAXY R. M. Feenstra, Huajie Chen, V. Ramachandran, Surface Review and Letters Materials ScienceMaterials EngineeringAluminium NitrideEngineeringPhysics	2000	17
Growth of GaN on SiC(0001) by Molecular Beam Epitaxy C. D. Lee, Ashutosh Sagar, R. M. Feenstra, physica status solidi (a) Materials EngineeringMaterials ScienceElectrical EngineeringDislocation DensitiesEdge Dislocations	2001	12

Page 1