Ashutosh Sagar - Concepedia

Author

Ashutosh Sagar

Carnegie Mellon University

Also Known As

A. Sagar, Ashutosh Sagar, C. D. Lee

Publications

353

Citations

H-Index

Concepts

All Affiliations

Carnegie Mellon University University at Albany, State University of New York Virginia Commonwealth University University of Maryland, College Park

About

Ashutosh Sagar is an author at Carnegie Mellon University specializing in applied physics, materials engineering, and engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Applied Physics	10	10	334
2	Engineering	9	9	322
3	Materials Engineering	9	9	322
4	Materials Science	8	8	264
5	Electrical Engineering	4	4	160

Ashutosh Sagar

Publications

334

Citations

H-Index

Page 1

	Year	Citations
Role of Ga flux in dislocation reduction in GaN films grown on SiC(0001) C. D. Lee, Ashutosh Sagar, R. M. Feenstra, Applied Physics Letters Materials EngineeringMaterials ScienceElectrical EngineeringGa FluxX-ray Rocking Curve	2001	64
Growth of GaN on porous SiC and GaN substrates C. K. Inoki, T. S. Kuan, C. D. Lee, Journal of Electronic Materials Materials EngineeringElectrical EngineeringGan SubstratesEngineeringApplied Physics	2003	58
Morphology and effects of hydrogen etching of porous SiC Ashutosh Sagar, C. D. Lee, R. M. Feenstra, Journal of Applied Physics Materials ScienceMaterials EngineeringPore StructureEngineeringPorous Network	2002	46
Properties of GaN epitaxial layers grown on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy C. D. Lee, V. Ramachandran, Ashutosh Sagar, Journal of Electronic Materials Materials EngineeringMaterials ScienceSemiconductor TechnologyEngineeringApplied Physics	2001	36
Dislocation density reduction in GaN using porous SiN interlayers Ashutosh Sagar, R. M. Feenstra, C. K. Inoki, physica status solidi (a) Materials ScienceMaterials EngineeringMocvd ChamberEngineeringPhysics	2005	31
Efficacy of single and double SiNx interlayers on defect reduction in GaN overlayers grown by organometallic vapor-phase epitaxy Feng Yun, Youngboo Moon, Y. Fu, Journal of Applied Physics Wide-bandgap SemiconductorPoint DefectsEngineeringSinx InterlayersSemiconductor Nanostructures	2005	30
Plasma-assisted molecular beam epitaxy of GaN on porous SiC substrates with varying porosity Ashutosh Sagar, C. D. Lee, R. M. Feenstra, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena Materials ScienceMaterials EngineeringElectrical EngineeringWide-bandgap SemiconductorEngineering	2003	26
Growth of Gan on Porous Sic Substrates by Plasma-Assisted Molecular Beam Epitaxy C. K. Inoki, T. S. Kuan, C. D. Lee, MRS Proceedings Materials EngineeringMaterials ScienceSemiconductor TechnologyWide-bandgap SemiconductorEngineering	2002	19
Growth of GaN on SiC(0001) by Molecular Beam Epitaxy C. D. Lee, Ashutosh Sagar, R. M. Feenstra, physica status solidi (a) Materials EngineeringMaterials ScienceElectrical EngineeringDislocation DensitiesEdge Dislocations	2001	12
A study of the morphology of GaN seed layers on in situ deposited SixNy and its effect on properties of overgrown GaN epilayers Y. T. Moon, Jinqiao Xie, C. Liu, Journal of Crystal Growth Overgrown Gan EpilayersGan Seed LayersAluminum Gallium NitrideApplied PhysicsGan Power Device	2006	12

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