Concepedia

Publication | Open Access

Properties of GaN epitaxial layers grown on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy

DOIFull Paper Access

36

Citations

23

References

2001

Year

C. D. Lee, V. Ramachandran, Ashutosh Sagar, R. M. Feenstra, David W. Greve, Wendy L. Sarney, L. Salamanca‐Riba, D. C. Look, Song Bai, W. J. Choyke,
Journal of Electronic Materials

References

YearCitations

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