H.-M. Rein - Concepedia

Author

H.-M. Rein

Also Known As

H Rein, H. M. Rein, H. Rein, H.-M Rein, H.-M. REIN, H.-M. Rein, H.M. Rein, HANS-MARTIN REIN, Hans-Martin Rein, J. Hauenschild

163

Publications

3.5K

Citations

H-Index

Concepts

All Affiliations

Ruhr University Bochum Siemens (Germany)Infineon Technologies (Germany)

About

H.-M. Rein is an author at Ruhr University Bochum specializing in engineering, microelectronics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	32	72	2.9K
2	Computer Engineering	22	42	1.5K
3	Applied Physics	14	18	697
4	Education	1	1	34
5	Natural Sciences	1	1	11

H.-M. Rein

Publications

3.1K

Citations

H-Index

Page 1

	Year	Citations
Design considerations for very-high-speed Si-bipolar IC's operating up to 50 Gb/s H.-M. Rein, Michael Möller IEEE Journal of Solid-State Circuits EngineeringVlsi DesignComputer ArchitectureSilicon On InsulatorCircuit System	1996	266
Millimeter-wave VCOs with wide tuning range and low phase noise, fully integrated in a SiGe bipolar production technology Hao Li, H.-M. Rein IEEE Journal of Solid-State Circuits Low-power ElectronicsMillimeter-wave Voltage-controlled OscillatorsMillimeter Wave TechnologyEngineeringVlsi Design	2003	163
Fully integrated SiGe VCOs with powerful output buffer for 77-GHz automotive Radar systems and applications around 100 GHz Hao Li, H.-M. Rein, T. Suttorp, IEEE Journal of Solid-State Circuits Low-power ElectronicsElectrical EngineeringSige VcosEngineeringRadio Frequency	2004	151
Influence of impact-ionization-induced instabilities on the maximum usable output voltage of Si-bipolar transistors M. Rickelt, H.-M. Rein, Elizabeth Rose IEEE Transactions on Electron Devices Device ModelingElectrical EngineeringEngineeringElectronic EngineeringBias Temperature Instability	2001	139
SiGe Bipolar VCO With Ultra-Wide Tuning Range at 80 GHz Center Frequency Nils Pohl, H.-M. Rein, Thomas Musch, IEEE Journal of Solid-State Circuits Sige Millimeter-wave VcoElectrical EngineeringUltra-wide Tuning RangeGhz Center FrequencyEngineering	2009	97
120-Gb/s VCSEL-Based Parallel-Optical Interconnect and Custom 120-Gb/s Testing Station D.M. Kuchta, Young Kwark, Christian Schuster, Journal of Lightwave Technology Free-space Optical NetworkPhotonicsElectrical EngineeringEngineering12-Channel Sige Receiver	2004	96
Modeling substrate effects in the design of high-speed Si-bipolar ICs Martin Pfost, H.-M. Rein, T. Holzwarth IEEE Journal of Solid-State Circuits EngineeringVlsi DesignPower ElectronicsSilicon On InsulatorInterconnect (Integrated Circuits)	1996	92
Modeling and measurement of substrate coupling in Si-bipolar IC's up to 40 GHz Martin Pfost, H.-M. Rein IEEE Journal of Solid-State Circuits EngineeringSilicon On InsulatorElectromagnetic CompatibilityPhysical Design (Electronics)Rf Semiconductor	1998	77
Multi-gigabit-per-second silicon bipolar ICs for future optical-fiber transmission systems H.-M. Rein IEEE Journal of Solid-State Circuits PhotonicsSystem On ChipElectrical EngineeringEngineeringVlsi Design	1988	72
A simple method for separation of the internal and external (peripheral) currents of bipolar transistors H.-M. Rein Solid-State Electronics Electrical EngineeringEngineeringSimple MethodPhysicsMicroelectronics	1984	65

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