IEEE Journal of Solid-State Circuits · 2009 · 97 citations · 14 references
Sige Millimeter-wave VcoElectrical EngineeringUltra-wide Tuning RangeGhz Center FrequencyEngineeringMillimeter Wave TechnologyAp 30High-frequency DeviceMixed-signal Integrated CircuitRadio FrequencyPhase NoiseMicroelectronicsMicrowave EngineeringSige Bipolar Vco
A SiGe millimeter-wave VCO with a center frequency around 80 GHz and an extremely wide (continuous) tuning range of 24.5 GHz ( ap 30%) is presented. The phase noise at 1 MHz offset is -97 dBc/Hz at the center frequency (and less than -94 dBc/Hz in a frequency range of 21 GHz). The maximum total output power is about 12 dBm. A cascode buffer improves decoupling from the output load at reasonable VCO power consumption (240 mW at 5 V supply voltage). A low-power frequency divider (operating up to 100 GHz) provides, in addition, a divided-by-four signal. As a further intention of this paper, the basic reasons for the limitation of the tuning range in millimeter-wave VCOs are shown and the improvement by using two (instead of one) varactor pairs is demonstrated.
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Design and Scaling of W-Band SiGe BiCMOS VCOs
Sean T. Nicolson, Kenneth H. K. Yau, P. Chevalier et al. · IEEE Journal of Solid-State Circuits · 2007 · 57 citations