High power wideband AlGaN/GaN HEMT feedbackamplifier module with drain and feedback loopinductances

Abstract

A high power wideband feedback amplifier module using AlGaN/GaN high electron mobility transistor has been developed that covers the frequency range of DC to 5 GHz with small signal gain of 9 dB. Shunt feedback topology is introduced by adding inductances to increase the bandwidth. At mid-band frequency, power added efficiency of 20% and a saturation power level of 29.5 dBm were obtained at a drain voltage of 12 V (Vds) and a gate voltage of –3 V (Vgs).