Electro-thermo-mechanical modeling of GaN-based HFETs and MOSHFETs

Abstract

A multiphysics model was developed to describe the evolution of the electrical and thermal behavior along with the mechanical stress fields in AlGaN/GAN heterostructure field-effect transistors and metal-oxide semiconductor heterostructure field-effect transistors under operational conditions. The electric field and power dissipation were obtained from Maxwell's equations. A one-way coupling procedure between the electrical and thermo-mechanical model was utilized to estimate the peak temperature and thermal stresses in these devices. By coupling the solutions, the direct impact of the electrical performance on the thermal stresses in these devices was analyzed.