2002 · 16 citations · 11 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsHigh-frequency Semiconductor DevicesMicrowave Semiconductor DevicesNoise In Electronic DevicesNoise In Semiconductor DevicesSemiconductor HeterostructuresSemiconductor PhysicsGallium Nitride Microwave Integrated CircuitsHeterostructure DevicesHeterostructure TransistorsHigh-electron-mobility TransistorsHigh-frequency ElectronicsLow-noise DesignNoise FigureNoise Figure Analysis
A 0.15 /spl mu/m T-shaped gate AlInAs/InGaAs high electron mobility transistor (HEMT) with excellent RF performances has been developed using a selective wet gate recess etching. An extremely low minimum noise figure (Fmin) of 0.9 dB with an associated gain (Ga) of 7.0 dB has been achieved at 60 GHz for a SiON-passivated device. This is the lowest value of Fmin ever reported for AlInAs/InGaAs HEMT with a passivation film.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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High-performance submicrometer AlInAs-GaInAs HEMT's
Umesh K. Mishra, April S. Brown, L.M. Jelloian et al. · IEEE Electron Device Letters · 1988 · 93 citations
Photo/EB hybrid exposure process for T-shaped gate superlow-noise HEMTs
K. Hosogi, Nobumasa Nakano, H. Minami et al. · Electronics Letters · 1991 · 31 citations