A study of semi-insulating GaN grown on AlN buffer/sapphire substrate by metalorganic chemical vapor deposition

Role of threading dislocation structure on the x-ray diffraction peak widths in epitaxial GaN films

B. Heying, Xuemei Wu, S. Keller et al. · Applied Physics Letters · 1996 · 829 citations

Natural Sciences, Materials Engineering, Materials Science +17

Very-high power density AlGaN/GaN HEMTs

Yifeng Wu, D. Kapolnek, J. P. Ibbetson et al. · IEEE Transactions on Electron Devices · 2001 · 558 citations

Engineering, Electrical Engineering, Materials Science +17

Degenerate layer at GaN/sapphire interface: Influence on Hall-effect measurements

D. C. Look, R. J. Molnar · Applied Physics Letters · 1997 · 361 citations

Engineering, Materials Science, Physics +17

Growth of Fe doped semi-insulating GaN by metalorganic chemical vapor deposition

S. Heikman, S. Keller, Steven P. DenBaars et al. · Applied Physics Letters · 2002 · 358 citations

Engineering, Materials Engineering, Materials Science +17

AlN/GaN and (Al,Ga)N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxy

I. P. Smorchkova, L. Chen, Thomas E. Mates et al. · Journal of Applied Physics · 2001 · 327 citations

Engineering, Materials Science, Physics +17