IEEE Electron Device Letters · 1994 · 129 citations · 5 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesSemiconductor MaterialsCmos Circuit DesignCurrent-voltage CharacteristicsIntegrated Circuit DesignLeakage Power ReductionMetal-oxide-semiconductor Field-effect TransistorsShort-channel EffectsCurrent Drive TheoryGate-dependent Current-voltage BehaviorOscillator DevicesPower MosfetsSilicon-on-insulator TechnologyThreshold VoltageUltra-low-voltage Circuit DesignVoltage
A new mode of operation for Silicon-On-Insulator (SOI) MOSFET is experimentally investigated. This mode gives rise to a Dynamic Threshold voltage MOSFET (DTMOS). DTMOS threshold voltage drops as gate voltage is raised, resulting in a much higher current drive than regular MOSFET at low V/sub dd/. On the other hand, V/sub t/ is high at V/sub gs/=0, thus the leakage current is low. Suitability of this device for ultra low voltage operation is demonstrated by ring oscillator performance down to V/sub dd/=0.5 V.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
5
Low-voltage CMOS device scaling
Chenming Hu · 2002 · 43 citations
Engineering, Computer Engineering, Electrical Engineering +14