IEEE Transactions on Electron Devices · 1995 · 58 citations · 7 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesSemiconductor MaterialsBipolar Junction TransistorsDevice CharacterizationHeat ConductionSemiconductor PhysicsTemperature MeasurementThermal Properties Of SemiconductorsHeterojunction Bipolar TransistorsHigh-temperature Device OperationJunction ResistanceJunction Temperature EstimationMeasurement TechniquesTemperature-dependent Electrical MeasurementsThermal Management Of Semiconductor DevicesThermal Resistance
An electrical method to determine the junction temperature of a power bipolar transistor is presented. The success of this method does not rely on the constancy of thermal resistance over the wide range of operating temperatures. It is hence suitable for transistors operating at high power densities where conventional measurement techniques would not apply. Using this method, we establish that the junction temperature can be 40/spl deg/C higher than the product of the low temperature thermal resistance and the power dissipation.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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