IEEE Electron Device Letters · 2005 · 87 citations · 5 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsComplementary Metal-oxide-semiconductor TechnologyDevice CharacterizationMetal-oxide-semiconductor Field-effect TransistorsOxide SemiconductorsSemiconductor Device MaterialsSemiconductor PhysicsCurrent DensityGate Oxide Thickness EffectsGate-dependent Current-voltage BehaviorOxide DielectricsSilicon CarbideSilicon Carbide (Sic) MaterialsSilicon Carbide Power DevicesSilicon-on-insulator Technology
We describe the on-state performance of trench oxide-protected SiC UMOSFETs on 115-μm-thick n-type 4H-SiC epilayers designed for blocking voltages up to 14 kV. An on-state current density of 137 A/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> and specific on-resistance of 228 m/spl Omega//spl middot/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> are achieved at a gate bias of 40 V (oxide field of 2.67 MV/cm). The effect of current spreading on the specific on-resistance for finite-dimension devices is investigated, and appropriate corrections are made.
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Development of 10 kV 4H-SiC Power DMOSFETs
Sei‐Hyung Ryu, Anant Agarwal, Sumi Krishnaswami et al. · Materials science forum · 2004 · 39 citations · Full text
High-voltage UMOSFETs in 4H SiC
I.A. Khan, James A. Cooper, M. A. Capano et al. · 2003 · 28 citations