V.A.K. Temple

MOS-Controlled thyristors—A new class of power devices

V.A.K. Temple · IEEE Transactions on Electron Devices · 1986 · 179 citations

Engineering, Electrical Engineering, Materials Science +15

Theory and breakdown voltage for planar devices with a single field limiting ring

M.S. Adler, V.A.K. Temple, A. Ferro et al. · IEEE Transactions on Electron Devices · 1977 · 130 citations

Engineering, Electrical Engineering, Electromagnetics +13

MOS Controlled thyristors (MCT's)

V.A.K. Temple · 1984 · 129 citations

Engineering, Electrical Engineering, Materials Science +17

Junction termination extension for near-ideal breakdown voltage in p-n junctions

V.A.K. Temple, W. Tantraporn · IEEE Transactions on Electron Devices · 1986 · 101 citations

Engineering, Electrical Engineering, Materials Science +17

Junction termination extension (JTE), A new technique for increasing avalanche breakdown voltage and controlling surface electric fields in P-N junctions

V.A.K. Temple · 1977 · 70 citations

Engineering, Electrical Engineering, Materials Science +17