2009 · 72 citations · 17 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesCmos Circuit DesignField-effect TransistorsIntegrated Circuit DesignMetal-oxide-semiconductor Field-effect TransistorsQuantum TunnelingShort-channel EffectsAmbipolar TransportCurrentsExperimental Study DesignQuantum Tunneling EffectsSubthreshold SwingSubthreshold Swing AnalysisTunneling CurrentTunneling Field-effect Transistors
The goal of this paper is to present and to analyze the tunnel FET and its specific properties (small subthreshold swing, very low OFF currents). We investigate the opportunities offered by this sub-ldquokT/qrdquo swing device and review the issues that TFET has to overcome (ambipolar behaviour, low ON current) for future circuit applications. For that purpose we report on experimental results on SOI, Si <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1-x</sub> Ge <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> OI & GeOI TFETs, fabricated using a fully depleted SOI CMOS process flow with high-k & metal gate stack.
17
Band-to-Band Tunneling in Carbon Nanotube Field-Effect Transistors
Joerg Appenzeller, Yu-Ming Lin, Joachim Knoch et al. · Physical Review Letters · 2004 · 880 citations
Complementary tunneling transistor for low power application
Pengzhan Wang, K. Hilsenbeck, T. Nirschl et al. · Solid-State Electronics · 2004 · 519 citations
Engineering, Electrical Engineering, Electronic Materials +10