1-mm gate periphery AlGaN/AlN/GaN HEMTs on SiC with output power of 9.39W at 8GHz

30-W/mm GaN HEMTs by Field Plate Optimization

Yifeng Wu, A. Saxler, M. Moore et al. · IEEE Electron Device Letters · 2004 · 1.1K citations

Engineering, Electrical Engineering, Materials Science +17

AlGaN/AlN/GaN high-power microwave HEMT

L. Shen, S. Heikman, Brendan Moran et al. · IEEE Electron Device Letters · 2001 · 494 citations

Engineering, Electrical Engineering, Materials Science +17

Improved Power Performance for a Recessed-Gate AlGaN–GaN Heterojunction FET With a Field-Modulating Plate

Yasuhiro Okamoto, Yuji Ando, K. Hataya et al. · IEEE Transactions on Microwave Theory and Techniques · 2004 · 116 citations

Engineering, Electrical Engineering, Microelectronics +16

High-electron-mobility AlGaN∕AlN∕GaN heterostructures grown on 100-mm-diam epitaxial AlN/sapphire templates by metalorganic vapor phase epitaxy

Makoto Miyoshi, Hiroyasu Ishikawa, Takashi Egawa et al. · Applied Physics Letters · 2004 · 93 citations

Engineering, Materials Engineering, Materials Science +17

AlGaN/AlN/GaN/SiC HEMT structure with high mobility GaN thin layer as channel grown by MOCVD

Xiaoliang Wang, Guoxin Hu, Zhiyong Ma et al. · Journal of Crystal Growth · 2006 · 73 citations

Engineering, Electrical Engineering, Materials Science +14