Weijun Luo

Robust SiN<sub><italic>x</italic></sub>/AlGaN Interface in GaN HEMTs Passivated by Thick LPCVD-Grown SiN<sub><italic>x</italic></sub> Layer

Xinhua Wang, Sen Huang, Yingkui Zheng et al. · IEEE Electron Device Letters · 2015 · 74 citations

Semiconductors, Materials Science, Electrical Engineering +15

The influence of 1 nm AlN interlayer on properties of the Al0.3Ga0.7N/AlN/GaN HEMT structure

Lunchun Guo, Xiaoliang Wang, Cuimei Wang et al. · Microelectronics Journal · 2008 · 35 citations

High-Power ${X}$ -Band 5-b GaN Phase Shifter With Monolithic Integrated E/D HEMTs Control Logic

Weijun Luo, Hui Liu, Zongjing Zhang et al. · IEEE Transactions on Electron Devices · 2017 · 32 citations

Wide-bandgap Semiconductor, Electrical Engineering, Continuous Wave Power +9

Influence of AlN buffer layer thickness on the properties of GaN epilayer on Si(1 1 1) by MOCVD

Weijun Luo, Xiaoliang Wang, Lunchun Guo et al. · Microelectronics Journal · 2008 · 31 citations

Growth and fabrication of AlGaN/GaN HEMT based on Si(1 1 1) substrates by MOCVD

Weijun Luo, Xiaoliang Wang, Hongling Xiao et al. · Microelectronics Journal · 2008 · 31 citations