Lunchun Guo

The influence of 1 nm AlN interlayer on properties of the Al0.3Ga0.7N/AlN/GaN HEMT structure

Lunchun Guo, Xiaoliang Wang, Cuimei Wang et al. · Microelectronics Journal · 2008 · 35 citations

Growth and fabrication of AlGaN/GaN HEMT based on Si(1 1 1) substrates by MOCVD

Weijun Luo, Xiaoliang Wang, Hongling Xiao et al. · Microelectronics Journal · 2008 · 31 citations

Effects of buffer layers on the stress and morphology of GaN epilayer grown on Si substrate by MOCVD

Zhe Liu, Xiaoliang Wang, Junxi Wang et al. · Journal of Crystal Growth · 2006 · 22 citations

Materials Science, Materials Engineering, Electrical Engineering +9

AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer

Xinke Liu, Hong Gu, Kuilong Li et al. · AIP Advances · 2017 · 22 citations · Full text

Materials Science, Semiconductor Technology, Electrical Engineering +11

The influence of internal electric fields on the transition energy of InGaN/gaN quantum well

Lunchun Guo, Xiaoliang Wang, Hongling Xiao et al. · Journal of Crystal Growth · 2007 · 20 citations

Transition Energy, Wide-bandgap Semiconductor, Electrical Engineering +11