IEEE Electron Device Letters · 2004 · 80 citations · 7 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesSemiconductor MaterialsDevice CharacterizationDevice ModelingDevice SimulationDopingHigh-frequency Semiconductor DevicesIntegrated Circuit DesignChannel DopingChannel Doping EffectsDevice OptimizationLinearityLinearity EnhancementSilicon-on-insulator TechnologyTransistor NonlinearityWork Function
RF linearity of double-gate (DG) MOSFETs is investigated using accurate two-dimensional simulations. It is shown that the asymmetric DG-MOSFET is more linear than the symmetric counterpart and that DG-MOSFET linearity can be improved by a careful optimization of channel thickness, nonuniform doping profile and gate work function. For optimum linearity, a nonuniform doping profile and a thick (/spl sim/20 nm) silicon-on-insulator (SOI) layer is required. An intuitive description of this optimization is presented.
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P.H. Woerlee, M.J. Knitel, R. van Langevelde et al. · IEEE Transactions on Electron Devices · 2001 · 333 citations