Electrochemical capacitance voltage profiling of the narrow band gap semiconductor InAs

Capacitance-voltage profiling and the characterisation of III-V semiconductors using electrolyte barriers

P. Blood · Semiconductor Science and Technology · 1986 · 274 citations

Natural Sciences, Materials Engineering, Materials Science +17

An automatic carrier concentration profile plotter using an electrochemical technique

T. Ambridge, M. M. Faktor · Journal of Applied Electrochemistry · 1975 · 91 citations

Natural Sciences, Chemical Engineering, Chemistry +14

High mobility InAs grown on GaAs substrates using tertiarybutylarsine and trimethylindium

S. P. Watkins, C. A. Tran, Richard Arès et al. · Applied Physics Letters · 1995 · 34 citations

Engineering, Electrical Engineering, Materials Science +17

Defect control during growth of highly mismatched (100)

A. Trampert, E. Tournié, K. H. Ploog · Journal of Crystal Growth · 1995 · 24 citations

Engineering, Genetics, Fault-tolerant Computing +5

Evidence for misfit dislocation-related carrier accumulation at the InAs/GaP heterointerface

V. Gopal, E. P. Kvam, T. P. Chin et al. · Applied Physics Letters · 1998 · 17 citations

Natural Sciences, Materials Science, Physics +17