E. P. Kvam

Dislocation nucleation near the critical thickness in GeSi/Si strained layers

D. J. Eaglesham, E. P. Kvam, D. M. Maher et al. · Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties · 1989 · 159 citations

Natural Sciences, Materials Engineering, Materials Science +17

Variation of dislocation morphology with strain in Ge_<i>x</i>Si_1−<i>x</i> epilayers on (100)Si

E. P. Kvam, D. M. Maher, C. J. Humphreys · Journal of materials research/Pratt's guide to venture capital sources · 1990 · 95 citations

Natural Sciences, Materials Engineering, Materials Science +12

Critical current density and microstructure of melt-processed YBa2Cu3O with PtO2 additions

C. Varanasi, Paul J. McGinn, Vikram Pavate et al. · Physica C Superconductivity · 1994 · 53 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +15

Surface orientation and stacking fault generation in strained epitaxial growth

E. P. Kvam, R. Hull · Journal of Applied Physics · 1993 · 52 citations

Natural Sciences, Materials Engineering, Materials Science +17

Development of epitaxial Al_<i>x</i>Sc_1−<i>x</i>N for artificially structured metal/semiconductor superlattice metamaterials

Bivas Saha, Sammy Saber, Gururaj V. Naik et al. · physica status solidi (b) · 2014 · 51 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17