Capacitance fluctuations in bulk MOSFETs due to random discrete dopants

Simulation of intrinsic parameter fluctuations in decananometer and nanometer-scale MOSFETs

Asen Asenov, A. R. Brown, J. H. Davies et al. · IEEE Transactions on Electron Devices · 2003 · 549 citations

Engineering, Electrical Engineering, Physics +17

Simulation Study of Individual and Combined Sources of Intrinsic Parameter Fluctuations in Conventional Nano-MOSFETs

Gareth Roy, A. R. Brown, Fikru Adamu-Lema et al. · IEEE Transactions on Electron Devices · 2006 · 278 citations

Engineering, Electrical Engineering, Materials Science +17

Impact of intrinsic parameter fluctuations in decanano MOSFETs on yield and functionality of SRAM cells

B. Cheng, S. Roy, G. Roy et al. · Solid-State Electronics · 2005 · 90 citations

Engineering, Computer Engineering, Electrical Engineering +16

Hierarchical approach to "atomistic" 3-D MOSFET simulation

Asen Asenov, A. R. Brown, J. H. Davies et al. · IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems · 1999 · 72 citations

Engineering, Computer Engineering, Electrical Engineering +17

Comparative analysis of conventional and statistical design techniques

Steven M. Burns, Mahesh Ketkar, Noel Menezes et al. · Proceedings - ACM IEEE Design Automation Conference · 2007 · 33 citations

Engineering, Computer Engineering, Electrical Engineering +17