Electric-field-driven dielectric breakdown of metal-insulator-metal hafnium silicate

Abstract

The breakdown characteristics of the crystalline and amorphous hafnium (Hf) silicates have been studied using metal-insulator-metal capacitors. It is found that, although the distribution of time-dependent dielectric breakdown and charge to breakdown (QBD) are affected by crystallization, the breakdown is primarily controlled by the electric field rather than charge fluence.