Paul Kirsch

<inline-formula> <tex-math notation="TeX">${\rm MoS}_{2}$ </tex-math></inline-formula> Field-Effect Transistors With Graphene/Metal Heterocontacts

Yuchen Du, Lingming Yang, Jingyun Zhang et al. · IEEE Electron Device Letters · 2014 · 160 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Threshold Voltage Shift Due to Charge Trapping in Dielectric-Gated AlGaN/GaN High Electron Mobility Transistors Examined in Au-Free Technology

Derek W. Johnson, Rinus T. P. Lee, Richard J. Hill et al. · IEEE Transactions on Electron Devices · 2013 · 66 citations

Engineering, Electrical Engineering, Materials Science +17

Metal Electrode/High-$k$ Dielectric Gate-Stack Technology for Power Management

Byoung Hun Lee, Seung Chul Song, Rino Choi et al. · IEEE Transactions on Electron Devices · 2008 · 61 citations

Engineering, Electrical Engineering, Materials Science +17

Benchmarking Transition Metal Dichalcogenide MOSFET in the Ultimate Physical Scaling Limit

Kausik Majumdar, Chris Hobbs, Paul Kirsch · IEEE Electron Device Letters · 2014 · 61 citations

Engineering, Electrical Engineering, Physics +17

Band-Engineered Low PMOS V<inf>T</inf> with High-K/Metal Gates Featured in a Dual Channel CMOS Integration Scheme

H. R. Harris, Pankaj Kalra, Prashant Majhi et al. · 2007 · 36 citations

Engineering, Electrical Engineering, Materials Science +15