Benchmarking Transition Metal Dichalcogenide MOSFET in the Ultimate Physical Scaling Limit

Abstract

In this letter, we propose a nonplanar transition metal dichalcogenide (TMD) channel field effect transistor and explore its ballistic performance in the ultimate scaling limit of sub-5 nm physical gate length (L <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">g</sub> ) using self-consistent nonequilibrium Greens function framework. It is observed that electrostatic integrity remains intact even at such ultrashort L <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">g</sub> and physical scaling is eventually limited by direct source-drain tunneling. Benchmarking different TMD channels at various off-state current conditions shows potential for ultralow-leakage applications with small footprint, excellent energy efficiency, and moderate performance.