An analysis of the threshold voltage for short-channel IGFET's

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	Year	Citations
Surface effects on p-n junctions: Characteristics of surface space-charge regions under non-equilibrium conditions Andrew S. Grove, D.J. Fitzgerald Solid-State Electronics Surface EffectsEngineeringPhysicsNanoelectronicsSurface Science	1966	434
Investigation of thermally oxidised silicon surfaces using metal-oxide-semiconductor structures Andrew S. Grove, B. E. Deal, E. H. Snow, Solid-State Electronics Materials ScienceEngineeringOxide ElectronicsSurface ScienceApplied Physics	1965	416
Low level currents in insulated gate field effect transistors M.B. Barron Solid-State Electronics	1972	108
Low-level currents in insulated gate field effect transistors Microelectronics Reliability Device ModelingLow-level CurrentsElectrical EngineeringEngineeringSemiconductor Device	1972	105
Subthreshold drain leakage currents in MOS field-effect transistors W.M. Gosney IEEE Transactions on Electron Devices Electrical EngineeringEngineeringNanoelectronicsStress-induced Leakage CurrentBias Temperature Instability	1972	37
Theoretical threshold voltages for MOS field effect transistors P. Richman Solid-State Electronics Device ModelingElectrical EngineeringEngineeringNanoelectronicsBias Temperature Instability	1968	22
Two-dimensional solution of the d.c. characteristics for the m.o.s.t. G.A. Armstrong, J.A. Magowan, W.D. Ryan Electronics Letters EngineeringIntegrable SystemSilicon On InsulatorNanoelectronicsNumerical Simulation	1969	13

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