InGaSb: Single channel solution for realizing III–V CMOS

Abstract

There has been an upsurge of interest in the possibility of a low-power, high-performance CMOS based on III-V materials. For such a technology to be realized, advances are needed in a number of areas including: (a) comparable high performance from n- and p-channel devices for complementary logic; (b) reducing the impact of D <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">it</sub> ; and (c) overcoming low density of states (DOS) of electrons which could limit the NMOS I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</sub> . In this study, methods are investigated that deliver improvements in these three areas (Fig. 1). We chose to work on the 6.1-6.2Å lattice constant system with InGaSb as the channel material because of its advantages in terms of band engineering and high mobility/offsets for both electrons and holes [1-2]. Despite its larger lattice constant, antimonide's are also found to be potentially more suitable for hetero-integration [3]. We demonstrate electron/hole mobility >; 4000/900cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /Vs can be achieved in a single channel material. For the first time in III-V systems, both n- and p-channel transistors with one single channel material show comparable high on-current.