Han Zhao

Effects of barrier layers on device performance of high mobility In0.7Ga0.3As metal-oxide-semiconductor field-effect-transistors

Han Zhao, Yen‐Ting Chen, Jung Hwan Yum et al. · Applied Physics Letters · 2010 · 70 citations

Engineering, Electrical Engineering, Materials Science +16

$\hbox{In}_{0.7}\hbox{Ga}_{0.3}\hbox{As}$ Tunneling Field-Effect Transistors With an $I_{\rm on}$ of 50 $\mu\hbox{A}/\mu\hbox{m}$ and a Subthreshold Swing of 86 mV/dec Using $\hbox{HfO}_{2}$ Gate Oxide

Han Zhao, Yanlang Chen, Y. Wang et al. · IEEE Electron Device Letters · 2010 · 63 citations

Engineering, Electrical Engineering, Electronic Materials +15

Sub-50-nm $\hbox{In}_{0.7}\hbox{Ga}_{0.3}\hbox{As}$ MOSFETs With Various Barrier Layer Materials

Fei Xue, Aiting Jiang, Han Zhao et al. · IEEE Electron Device Letters · 2011 · 50 citations

Engineering, Electrical Engineering, Materials Science +16

High performance In0.7Ga0.3As metal-oxide-semiconductor transistors with mobility >4400 cm2/V s using InP barrier layer

Han Zhao, Yen‐Ting Chen, Jung Hwan Yum et al. · Applied Physics Letters · 2009 · 47 citations

Engineering, Electrical Engineering, Materials Science +17

Effects of gate-first and gate-last process on interface quality of In0.53Ga0.47As metal-oxide-semiconductor capacitors using atomic-layer-deposited Al2O3 and HfO2 oxides

Han Zhao, Jeff Huang, Yen‐Ting Chen et al. · Applied Physics Letters · 2009 · 42 citations

Engineering, Electrical Engineering, Materials Science +17