Applied Physics Letters · 2009 · 42 citations · 11 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsAtomic Layer DepositionInterface EngineeringMos CapacitorsSemiconductor Device MaterialsSemiconductor InterfacesSemiconductor SurfacesFrequency DispersionGate Oxide InterfacesGate OxidesInterface DensityInterface Quality AssuranceInterface Trap DensityInterface Trap ReductionPassivation Techniques
We have investigated the effects of gate-first and gate-last process on oxide/InGaAs interface quality using In0.53Ga0.47As metal-oxide-semiconductor capacitors (MOSCAPs) with atomic-layer-deposited (ALD) oxides. Sequence of source/drain activation anneal in the process results in remarkable electrical and physical difference. Applying gate-last process provides significant frequency dispersion reduction and interface trap density reduction for InGaAs MOSCAPs compared to gate-first process. A large amount of In–O, Ga–O, and As–As bonds was observed on InGaAs surface after gate-first process while no detectable interface reaction after gate-last process. Electrical and physical results also show that ALD Al2O3 exhibits better interface quality on InGaAs than HfO2.
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GaAs interfacial self-cleaning by atomic layer deposition
Christopher L. Hinkle, Arif Sonnet, Eric M. Vogel et al. · Applied Physics Letters · 2008 · 382 citations · Full text
Natural Sciences, Materials Engineering, Materials Science +17
Davood Shahrjerdi, Emanuel Tutuc, Sanjay K. Banerjee · Applied Physics Letters · 2007 · 120 citations