Jung Hwan Yum - Concepedia

Author

Jung Hwan Yum

The University of Texas at Austin

Also Known As

Jung Hwan Yum, Jung Yum

Publications

776

Citations

H-Index

Concepts

All Affiliations

The University of Texas at Austin Ulsan National Institute of Science and Technology Institute for Basic Science Yonsei University Advanced Institute of Convergence Technology

About

Jung Hwan Yum is an author at The University of Texas at Austin specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	16	23	677
2	Applied Physics	16	23	677
3	Electrical Engineering	13	15	508
4	Chemistry	2	2	57
5	Chemical Engineering	1	1	32

Jung Hwan Yum

Publications

728

Citations

H-Index

Page 1

	Year	Citations
Review—Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High-<i>k</i>Dielectrics: Beryllium Oxide, Aluminum Oxide, Hafnium Oxide, and Aluminum Nitride John T. Gaskins, Patrick E. Hopkins, Devin R. Merrill, ECS Journal of Solid State Science and Technology Aluminium NitrideOptical MaterialsEngineeringAtomic LayerAluminum Nitride	2017	116
Effects of barrier layers on device performance of high mobility In0.7Ga0.3As metal-oxide-semiconductor field-effect-transistors Han Zhao, Yen‐Ting Chen, Jung Hwan Yum, Applied Physics Letters Materials EngineeringInp/in0.52al0.48as Double-barrier LayerElectrical EngineeringBarrier LayersEngineering	2010	70
High performance In0.7Ga0.3As metal-oxide-semiconductor transistors with mobility &gt;4400 cm2/V s using InP barrier layer Han Zhao, Yen‐Ting Chen, Jung Hwan Yum, Applied Physics Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringEngineeringInp Barrier Layer	2009	47
Effects of gate-first and gate-last process on interface quality of In0.53Ga0.47As metal-oxide-semiconductor capacitors using atomic-layer-deposited Al2O3 and HfO2 oxides Han Zhao, Jeff Huang, Yen‐Ting Chen, Applied Physics Letters Materials ScienceSemiconductor TechnologyElectrical EngineeringInterface QualityEngineering	2009	42
Improved electrical characteristics of TaN/Al2O3/In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors by fluorine incorporation Yen‐Ting Chen, Han Zhao, Jung Hwan Yum, Applied Physics Letters Materials ScienceElectrical CharacteristicsElectrical EngineeringCf4 Plasma TreatmentEngineering	2009	34
Chemical Imprinting of Crystalline Silicon with Catalytic Metal Stamp in Etch Bath Bugeun Ki, Yunwon Song, Keorock Choi, ACS Nano EngineeringElectron-beam LithographyChemistrySilicon On InsulatorChemical Engineering	2017	32
Metal-oxide-semiconductor field-effect-transistors on indium phosphide using HfO2 and silicon passivation layer with equivalent oxide thickness of 18 Å Yen‐Ting Chen, Han Zhao, Jung Hwan Yum, Applied Physics Letters Electrical EngineeringSemiconductor DeviceEngineeringSi IplNanoelectronics	2009	30
In 0.53 Ga 0.47 As n-metal-oxide-semiconductor field effect transistors with atomic layer deposited Al2O3, HfO2, and LaAlO3 gate dielectrics Han Zhao, Jung Hwan Yum, Yen‐Ting Chen, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena Materials ScienceOxide HeterostructuresElectrical EngineeringEngineeringGa 0.47	2009	25
Gate-first inversion-type InP metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Al2O3 gate dielectric Han Zhao, Davood Shahrjerdi, Feng Zhu, Applied Physics Letters Materials ScienceWide-bandgap SemiconductorElectrical EngineeringEngineeringNanoelectronics	2008	25
Inversion-type indium phosphide metal-oxide-semiconductor field-effect transistors with equivalent oxide thickness of 12Å using stacked HfAlOx∕HfO2 gate dielectric Han Zhao, Davood Shahrjerdi, Feng Zhu, Applied Physics Letters Materials EngineeringMaterials ScienceElectrical EngineeringStacked Hfalox∕hfo2 ResultsEngineering	2008	25

Page 1