Jung Hwan Yum

Review—Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High-<i>k</i>Dielectrics: Beryllium Oxide, Aluminum Oxide, Hafnium Oxide, and Aluminum Nitride

John T. Gaskins, Patrick E. Hopkins, Devin R. Merrill et al. · ECS Journal of Solid State Science and Technology · 2017 · 116 citations · Full text

Aluminium Nitride, Optical Materials, Engineering +17

Effects of barrier layers on device performance of high mobility In0.7Ga0.3As metal-oxide-semiconductor field-effect-transistors

Han Zhao, Yen‐Ting Chen, Jung Hwan Yum et al. · Applied Physics Letters · 2010 · 70 citations

Materials Engineering, Inp/in0.52al0.48as Double-barrier Layer, Electrical Engineering +12

High performance In0.7Ga0.3As metal-oxide-semiconductor transistors with mobility &amp;gt;4400 cm2/V s using InP barrier layer

Han Zhao, Yen‐Ting Chen, Jung Hwan Yum et al. · Applied Physics Letters · 2009 · 47 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +11

Effects of gate-first and gate-last process on interface quality of In0.53Ga0.47As metal-oxide-semiconductor capacitors using atomic-layer-deposited Al2O3 and HfO2 oxides

Han Zhao, Jeff Huang, Yen‐Ting Chen et al. · Applied Physics Letters · 2009 · 42 citations

Materials Science, Semiconductor Technology, Electrical Engineering +15

Improved electrical characteristics of TaN/Al2O3/In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors by fluorine incorporation

Yen‐Ting Chen, Han Zhao, Jung Hwan Yum et al. · Applied Physics Letters · 2009 · 34 citations

Materials Science, Electrical Characteristics, Electrical Engineering +11