Concepedia

Ni/Au–Al2O3 gate stack prepared by low-temperature ALD and lift-off for MOS HEMTs

M. Blaho, D. Gregušová, M. Jurkovič, J. Fedor, P. Kordoš, K. Fröhlich, Frank Brunner, Melani Cho, Oliver Hilt, Joachim Würfl

Microelectronic Engineering · 2013 · 11 citations · 10 references

DOIFull text

Open access

Concepts

References

10

Effective Passivation of AlGaN/GaN HEMTs by ALD-Grown AlN Thin Film

Sen Huang, Qimeng Jiang, Shu Yang et al. · IEEE Electron Device Letters · 2012 · 246 citations

, , +17

Capacitance–Voltage Characteristics of Al<sub>2</sub>O<sub>3</sub>/AlGaN/GaN Structures and State Density Distribution at Al<sub>2</sub>O<sub>3</sub>/AlGaN Interface

Chihoko Mizue, Yujin Hori, Marcin Miczek et al. · Japanese Journal of Applied Physics · 2011 · 243 citations

, , +17

Threshold Voltage Instability in Al<sub>2</sub>O<sub>3</sub>/GaN/AlGaN/GaN Metal–Insulator–Semiconductor High-Electron Mobility Transistors

Sen Huang, Shu Yang, J. C. Roberts et al. · Japanese Journal of Applied Physics · 2011 · 158 citations

, , +17

A comprehensive analytical model for threshold voltage calculation in GaN based metal-oxide-semiconductor high-electron-mobility transistors

M. Ťapajna, J. Kuzmı́k · Applied Physics Letters · 2012 · 145 citations · Full text

, , +17

Capacitance–Voltage Characteristics of Al<sub>2</sub>O<sub>3</sub>/AlGaN/GaN Structures and State Density Distribution at Al<sub>2</sub>O<sub>3</sub>/AlGaN Interface

Chihoko Mizue, Yujin Hori, Marcin Miczek et al. · Japanese Journal of Applied Physics · 2011 · 140 citations · Full text

, , +17