Defect-selective etching of bulk AlN single crystals in molten KOH/NaOH eutectic alloy

Growth and applications of Group III-nitrides

O. Ambacher · Journal of Physics D Applied Physics · 1998 · 1.4K citations

Engineering, Materials Engineering, Materials Science +17

InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate

Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama et al. · Applied Physics Letters · 1998 · 732 citations

Engineering, Electrical Engineering, Materials Science +17

Electrical characterization of GaN p-n junctions with and without threading dislocations

P. Kozodoy, J. P. Ibbetson, H. Marchand et al. · Applied Physics Letters · 1998 · 357 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Structural evolution in epitaxial metalorganic chemical vapor deposition grown GaN films on sapphire

D. Kapolnek, X. H. Wu, B. Heying et al. · Applied Physics Letters · 1995 · 319 citations

Natural Sciences, Materials Engineering, Materials Science +17

Gallium nitride whiskers formed by selective photoenhanced wet etching of dislocations

C. Youtsey, Lucia Romano, I. Adesida · Applied Physics Letters · 1998 · 228 citations

Engineering, Materials Engineering, Materials Science +17