The use of beam shaping to achieve large-grain cw laser-recrystallized polysilicon on amorphous substrates

T. J. Stultz, J. F. Gibbons

Applied Physics Letters · 1981 · 77 citations · 6 references

Concepts

Abstract

Laser beam shaping has been used to increase the grain size of laser-recrystallized polycrystalline silicon on amorphous substrates. Using a slanted liquid-solid interface, rectangular grains as large as 45×50 μm have been grown in 0.5-μm-thick chemical vapor deposited polysilicon on quartz substrates. Improved surface smoothness of recrystallized material has also been achieved using this procedure.

References

6