T.C. Holloway

The impact of scaling laws on the choice of n-channel or p-channel for MOS VLSI

P.K. Chatterjee, W. R. Hunter, T.C. Holloway et al. · IEEE Electron Device Letters · 1980 · 142 citations

Electrical Engineering, Engineering, Vlsi Design +14

Development of the self-aligned titanium silicide process for VLSI applications

M.E. Alperin, T.C. Holloway, R.A. Haken et al. · IEEE Transactions on Electron Devices · 1985 · 137 citations

Engineering, Vlsi Design, Integrated Circuits +20

Titanium disilicide contact resistivity and its impact on 1-µm CMOS circuit performance

D.B. Scott, R. A. Chapman, C.C. Wei et al. · IEEE Transactions on Electron Devices · 1987 · 78 citations

Silicon-on-insulator m.o.s.f.e.t.s fabricated on laser-annealed polysilicon on SiO ₂

A.F. Tasch, T.C. Holloway, K.F. Lee et al. · Electronics Letters · 1979 · 54 citations

A new edge-defined approach for submicrometer MOSFET fabrication

W. R. Hunter, T.C. Holloway, P.K. Chatterjee et al. · IEEE Electron Device Letters · 1981 · 52 citations

Electrical Engineering, Physical Design (Electronics), Engineering +15