Characteristics of MOSFETs fabricated in laser-recrystallized polysilicon islands with a retaining wall structure on an insulating substrate

Abstract

A novel oxide retaining wall structure was formed, using a LOCOS process, around polysilicon islands deposited on insulating substrates prior to a laser-recrystallization process. The retaining wall significantly enlarged the window of laser beam power for proper recrystallization and prevented the deformation of the islands. The measured surface electron mobility of MOSFETs fabricated in the polysilicon islands on oxide substrates after the laser-recrystallization was higher for a higher beam power and mobilities as high as 600 to 700 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /V-sec have been measured.