Japanese Journal of Applied Physics · 2009 · 24 citations · 10 references
EngineeringSilicon-on-insulator Substrate ExtractedIntegrated CircuitsElectron MobilitySilicon On InsulatorCharge TransportSemiconductor DeviceBulk Universal CurveSemiconductorsElectronic DevicesNanoelectronicsSoi SubstratesCharge Carrier TransportSemiconductor TechnologyElectrical EngineeringPhysicsNanotechnologySemiconductor Device FabricationElectronic MaterialsApplied PhysicsUniversal Curve
In this paper, we report our experimental study on electron mobility in silicon gate-all-around (GAA) nanowire metal–oxide–semiconductor field-effect transistors (MOSFETs) on (100)-oriented silicon-on-insulator (SOI) substrates. With the aim of accurate mobility measurement, the improved split capacitance–voltage (C–V) method is utilized to remove parasitic resistance and capacitance. Accurate electron mobility in [100]-directed nanowires is achieved for the first time and shows high electron mobility that approaches the (100) bulk universal curve, while electron mobility in [110]-directed nanowires shows large degradation from the universal curve. The underlying physical mechanisms of mobility behaviors in nanowires on (100)-oriented SOI substrates are also investigated.
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