Jin‐Ping Han - Concepedia

Author

Jin‐Ping Han

Yale University ORCID

Also Known As

Han, J.-P., J. Han, J. P. Han, J.-P. Han, Jin-Ping Han, Jingwen Han, Jinping Han, Jin‐Ping Han

Publications

2.3K

Citations

H-Index

Concepts

All Affiliations

Yale University IBM (United States)National Institute of Standards and Technology IBM Research - Almaden IBM Research - Thomas J. Watson Research Center

About

Jin‐Ping Han is an author at Yale University specializing in engineering, electrical engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	17	23	1.8K
2	Applied Physics	15	17	1.4K
3	Social Sciences	3	3	237
4	Natural Sciences	2	2	93
5	Medicine	1	1	70

Jin‐Ping Han

Publications

2.2K

Citations

H-Index

Page 1

	Year	Citations
Why is nonvolatile ferroelectric memory field-effect transistor still elusive? T.P. Ma, Jin‐Ping Han IEEE Electron Device Letters Materials ScienceNon-volatile MemoryElectrical EngineeringEngineeringMemory Retention Time	2002	508
Ferroelectric Field Effect Transistors for Memory Applications Jason Hoffman, James W. Reiner, F. J. Walker, Advanced Materials	2010	309
Mobility Measurement and Degradation Mechanisms of MOSFETs Made With Ultrathin High-k Dielectrics Weihang Zhu, Jin‐Ping Han, T.P. Ma IEEE Transactions on Electron Devices Mobility ExtractionEngineeringUltrathin High-k DielectricsChannel MobilityGate Dielectric	2004	256
NVM neuromorphic core with 64k-cell (256-by-256) phase change memory synaptic array with on-chip neuron circuits for continuous in-situ learning Sang‐Bum Kim, Masatoshi Ishii, S.H. Lewis, EngineeringComputer ArchitectureContinuous In-situ LearningPhase Change MemoryNeurochip	2015	191
Electrode dependence of hydrogen-induced degradation in ferroelectric Pb(Zr,Ti)O3 and SrBi2Ta2O9 thin films Jin‐Ping Han, T. P. Applied Physics Letters Materials ScienceChemical EngineeringOxygen AnnealingEngineeringHydrogen-induced Degradation	1997	143
A cost effective 32nm high-K/ metal gate CMOS technology for low power applications with single-metal/gate-first process X. Chen, S. Samavedam, Vijay Narayanan, Low-power ElectronicsLow Power ApplicationsElectrical EngineeringEngineeringVlsi Design	2008	112
SrBi 2 Ta 2 O 9 memory capacitor on Si with a silicon nitride buffer Jin‐Ping Han, T. P. Applied Physics Letters EngineeringEmerging Memory TechnologyFerroelectric Random-access MemorySilicon Nitride FilmSilicon On Insulator	1998	96
High Inversion Current in Silicon Nanowire Field Effect Transistors Sang-Mo Koo, Akira Fujiwara, Jin‐Ping Han, Nano Letters	2004	92
Confined PCM-based Analog Synaptic Devices offering Low Resistance-drift and 1000 Programmable States for Deep Learning W. Kim, Robert L. Bruce, Takeshi Masuda, EngineeringAnalog DesignProgrammable StatesPhase Change MemoryNeurochip	2019	70
Ferroelectric DRAM (FEDRAM) FET with metal/SrBi/sub 2/Ta/sub 2/O/sub 9//SiN/Si gate structure Kwang Ho Kim, Jin‐Ping Han, Soon‐Won Jung, IEEE Electron Device Letters Gate StructureEngineeringFerroelectric Random-access MemoryFerroelectric DramFerroelectric Application	2002	58

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