Ken Shimizu

Direct Measurement of Correlation Between SRAM Noise Margin and Individual Cell Transistor Variability by Using Device Matrix Array

Toshiro Hiramoto, Makoto Suzuki, Xiaowei Song et al. · IEEE Transactions on Electron Devices · 2011 · 70 citations

Electrical Engineering, Engineering, Vlsi Design +14

Experimental study of mobility in [110]- and [100]-directed multiple silicon nanowire GAA MOSFETs on (100) SOI

Jiezhi Chen, Takuya Saraya, Kousuke Miyaji et al. · 2008 · 45 citations

Electrical Engineering, Semiconductor Device, Engineering +13

Electron Mobility in Silicon Gate-All-Around [100]- and [110]-Directed Nanowire Metal–Oxide–Semiconductor Field-Effect Transistor on (100)-Oriented Silicon-on-Insulator Substrate Extracted by Improved Split Capacitance–Voltage Method

Jiezhi Chen, Takura Saraya, Kousuke Miyaji et al. · Japanese Journal of Applied Physics · 2009 · 24 citations

Engineering, Silicon-on-insulator Substrate Extracted, Integrated Circuits +18

Direct measurements, analysis, and post-fabrication improvement of noise margins in SRAM cells utilizing DMA SRAM TEG

Motofumi Suzuki, Takuya Saraya, Ken Shimizu et al. · 2010 · 17 citations

Non-volatile Memory, Electrical Engineering, Engineering +13

Threshold-Voltage Control of AC Performance Degradation-Free FD SOI MOSFET With Extremely Thin BOX Using Variable Body-Factor Scheme

Tetsu Ohtou, Kouki Yokoyama, Ken Shimizu et al. · IEEE Transactions on Electron Devices · 2007 · 17 citations

Low-power Electronics, New Scheme, Electrical Engineering +10