The low-frequency noise behaviour of silicon-on-insulator technologies

Noise in solid-state microstructures: A new perspective on individual defects, interface states and low-frequency (1/<i>ƒ</i>) noise

M. J. Kirton, Michael J. Uren · Advances In Physics · 1989 · 1.3K citations

Natural Sciences, Materials Science, Physics +17

1/ƒ noise is no surface effect

F.N. Hooge · Physics Letters A · 1969 · 1.1K citations

Natural Sciences, Geophysics, Acoustics +5

A unified model for the flicker noise in metal-oxide-semiconductor field-effect transistors

Kuo-Hsiang Hung, P.K. Ko, Chenming Hu et al. · IEEE Transactions on Electron Devices · 1990 · 881 citations

Engineering, Electrical Engineering, Microelectronics +16

Simple technique for separating the effects of interface traps and trapped-oxide charge in metal-oxide-semiconductor transistors

P. J. McWhorter, P.S. Winokur · Applied Physics Letters · 1986 · 774 citations · Full text

Engineering, Electrical Engineering, Microelectronics +16

Double-gate silicon-on-insulator transistor with volume inversion: A new device with greatly enhanced performance

F. Balestra, S. Cristoloveanu, M. Benachir et al. · IEEE Electron Device Letters · 1987 · 750 citations

Engineering, Electrical Engineering, Materials Science +17