Study of nanocrystalline Ta(N,O) diffusion barriers for use in Cu metallization

Reactively sputtered TiN as a diffusion barrier between Cu and Si

Shiqing Wang, Ivo J. Raaijmakers, Brad J. Burrow et al. · Journal of Applied Physics · 1990 · 246 citations

Engineering, Materials Engineering, Materials Science +17

Tantalum-based diffusion barriers in Si/Cu VLSI metallizations

E. Kolawa, Jen‐Sue Chen, J.S. Reid et al. · Journal of Applied Physics · 1991 · 222 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Effects of Nitrogen, Methane, and Oxygen on Structure and Electrical Properties of Thin Tantalum Films

D. Gerstenberg, C. J. Calbick · Journal of Applied Physics · 1964 · 179 citations

Natural Sciences, Materials Engineering, Materials Science +16

Evaluation of amorphous (Mo, Ta, W)SiN diffusion barriers for 〈Si〉|Cu metallizations

J.S. Reid, E. Kolawa, R. Ruiz et al. · Thin Solid Films · 1993 · 165 citations

Natural Sciences, Materials Engineering, Materials Science +12

Comparison of high vacuum and ultra-high-vacuum tantalum diffusion barrier performance against copper penetration

L. A. Clevenger, N. A. Bojarczuk, K. Holloway et al. · Journal of Applied Physics · 1993 · 108 citations

Natural Sciences, Materials Engineering, Materials Science +17