Brad J. Burrow

Reactively sputtered TiN as a diffusion barrier between Cu and Si

Shiqing Wang, Ivo J. Raaijmakers, Brad J. Burrow et al. · Journal of Applied Physics · 1990 · 244 citations

Engineering, Sputtered Tin, Thin Film Process Technology +19

Diffusion barrier properties of TiW between Si and Cu

Shi‐Qing Wang, Sailesh Suthar, Christine Hoeflich et al. · Journal of Applied Physics · 1993 · 146 citations

Materials Engineering, Materials Science, Engineering +13

Interactions of thin Ti films with Si, SiO2, Si3N4, and SiO<i>x</i>N<i>y</i> under rapid thermal annealing

A. E. Morgan, E. K. Broadbent, K. N. Ritz et al. · Journal of Applied Physics · 1988 · 123 citations

Materials Science, Engineering, Crystalline Defects +11

A correlation of Auger electron spectroscopy, x‐ray photoelectron spectroscopy, and Rutherford backscattering spectrometry measurements on sputter‐deposited titanium nitride thin films

Brad J. Burrow, A. E. Morgan, R.C. Ellwanger · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1986 · 115 citations

X-ray Spectroscopy, Engineering, Atomic Emission Spectroscopy +20

Formation of TiN/TiSi₂/p⁺-Si/n-Si by rapid thermal annealing (RTA) silicon implanted with boron through titanium

M. Delfino, E. K. Broadbent, A. E. Morgan et al. · IEEE Electron Device Letters · 1985 · 47 citations

Materials Engineering, Materials Science, Electrical Engineering +15