Ivo J. Raaijmakers - Concepedia

Concepedia

Author

Ivo J. Raaijmakers

Philips (Netherlands)

Also Known As

I J Raaijmakers, I. J. M. M. Raaijmakers, I. J. Raaijmakers, I.J. Raaijmakers, I.J.M.M Raaijmakers, I.J.M.M. Raaijmakers, Ivo J Raaijmakers, Ivo J. M. M. Raaijmakers, Ivo J. Raaijmakers, Ivo J.M.M. Raaijmakers

40

Publications

1.1K

Citations

16

H-Index

40

Concepts

All Affiliations

Philips (Netherlands)NXP (Netherlands)Micro Focus (United States)Philips (Finland)Philips (United States)

IJ

About

Ivo J. Raaijmakers is an author at Philips (Netherlands) specializing in engineering, applied physics, and surface science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	16	24	1.1K
2	Applied Physics	14	21	960
3	Chemistry	6	6	267
4	Natural Sciences	2	2	94
5	Chemical Engineering	1	1	60

Ivo J. Raaijmakers

×

25

Publications

1.1K

Citations

16

H-Index

	Year	Citations
Reactively sputtered TiN as a diffusion barrier between Cu and Si Shiqing Wang, Ivo J. Raaijmakers, Brad J. Burrow, Journal of Applied Physics EngineeringSputtered TinThin Film Process TechnologySilicon On InsulatorElectron Microscopy	1990	244
A theoretical study and experimental investigation of non-LTE phenomena in an inductively-coupled argon plasma—I. Characterization of the discharge Ivo J. Raaijmakers, P.W.J.M. Boumans, B. van der Sijde, Spectrochimica Acta Part B Atomic Spectroscopy Electrical EngineeringTheoretical StudyEngineeringPhysicsNon-lte Kinetics	1983	97
The effect of density and microstructure on the performance of TiN barrier films in Cu metallization Ki-Chul Park, Ki‐Bum Kim, Ivo J. Raaijmakers Journal of Applied Physics EngineeringThin Film Process TechnologyChemical DepositionHigh DensityThin Film Processing	1996	92
Low temperature metal-organic chemical vapor deposition of advanced barrier layers for the microelectronics industry Ivo J. Raaijmakers Thin Solid Films Materials ScienceEngineeringThermal Barrier CoatingSurface ScienceApplied Physics	1994	73
The formation of an amorphous silicide by thermal reaction of sputter-deposited Ti and Si layers Ivo J. Raaijmakers, A. H. Reader, P.H. Oosting Journal of Applied Physics EngineeringChemistrySilicon On InsulatorAmorphous MaterialsCrystalline Tisi2	1988	67
Influence of grain size on the transformation temperature of C49 TiSi2 to C54 TiSi2 H. J. W. van Houtum, Ivo J. Raaijmakers, T. J. M. Menting Journal of Applied Physics EngineeringThin Film Process TechnologyChemistryGrain SizeTisi2 Thin Films	1987	65
A comparison of the reaction of titanium with amorphous and monocrystalline silicon Ivo J. Raaijmakers, Ki‐Bum Kim Journal of Applied Physics EngineeringCrystalline Silicide GrowthChemistrySilicon On InsulatorChemical Engineering	1990	60
On the charge transfer in an inductively coupled argon plasma J.A.M. van der Mullen, Ivo J. Raaijmakers, A.C.A.P. van Lammeren, Spectrochimica Acta Part B Atomic Spectroscopy EngineeringPhysicsApplied PhysicsApplied Plasma PhysicPlasma Science	1987	54
(Invited) Current and Future Applications of ALD in Micro-Electronics Ivo J. Raaijmakers ECS Transactions Materials ScienceAluminium NitrideElectrical EngineeringSlow Deposition RateEngineering	2011	52
Nucleation and growth of titanium silicide studied by <i>i</i> <i>n</i> <i>s</i> <i>i</i> <i>t</i> <i>u</i> annealing in a transmission electron microscope Ivo J. Raaijmakers, A. H. Reader, H. J. W. van Houtum Journal of Applied Physics Crystal StructureEngineeringElectron MicroscopyGrowth RateSilicene	1987	41

Page 1