Silicon nitride and polyimide capping layers on InGaAs/InP PIN photodetector after sulfur treatment

Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivation

C. J. Sandroff, R.N. Nottenburg, J.C. Bischoff et al. · Applied Physics Letters · 1987 · 722 citations

Engineering, Electrical Engineering, Materials Science +17

Universal Passivation Effect of (NH₄)₂S_x Treatment on the Surface of III-V Compound Semiconductors

Haruhiro Oigawa, Jia-Fa Fan, Yasuo Nannichi et al. · Japanese Journal of Applied Physics · 1991 · 247 citations

Natural Sciences, Materials Engineering, Materials Science +17

Effects of Na2S and (NH4)2S edge passivation treatments on the dark current-voltage characteristics of GaAs <i>p</i> <i>n</i> diodes

M. S. Carpenter, M. R. Melloch, Mark Lundstrom et al. · Applied Physics Letters · 1988 · 192 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

A Model to Explain the Effective Passivation of the GaAs Surface by (NH₄)₂S_x Treatment

Yasuo Nannichi, Jia-Fa Fan, Haruhiro Oigawa et al. · Japanese Journal of Applied Physics · 1988 · 186 citations

Natural Sciences, Materials Engineering, Materials Science +17

Ga&amp;lt;inf&amp;gt;0.47&amp;lt;/inf&amp;gt;In&amp;lt;inf&amp;gt;0.53&amp;lt;/inf&amp;gt;As: A ternary semiconductor for photodetector applications

T. P. Pearsall · IEEE Journal of Quantum Electronics · 1980 · 123 citations

Engineering, Electrical Engineering, Materials Science +17