Concepedia

Fabrication of Metal–Oxide–Diamond Field-Effect Transistors with Submicron-Sized Gate Length on Boron-Doped (111) H-Terminated Surfaces Using Electron Beam Evaporated SiO2 and Al2O3

Takeyasu Saito, Kyung-Ho Park, Kazuyuki Hirama, Hitoshi Umezawa, M Satoh, Hiroshi Kawarada, Zhi‐Quan Liu, Kazutaka Mitsuishi, Kazuo Furuya, Hideyo Okushi

Journal of Electronic Materials · 2011 · 33 citations · 29 references

Concepts

EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsElectron Beam LithographyField-effect TransistorsMetal-oxide-semiconductor Field-effect TransistorsNanoelectronicsSemiconductor Device MaterialsSemiconductor SurfacesDiamond Semiconductor DevicesDiamond Semiconductors

References

29

Band offsets of wide-band-gap oxides and implications for future electronic devices

John Robertson · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2000 · 2K citations

Engineering, Materials Engineering, Materials Science +17

The effect of surface treatment on the electrical properties of metal contacts to boron-doped homoepitaxial diamond film

Stephen Grot, G. Gildenblat, C. W. Hatfield et al. · IEEE Electron Device Letters · 1990 · 197 citations

Engineering, Materials Engineering, Materials Science +17

Enhancement mode metal-semiconductor field effect transistors using homoepitaxial diamonds

Hiroshi Kawarada, Makoto Aoki, Masahiro Ito · Applied Physics Letters · 1994 · 178 citations

Engineering, Electrical Engineering, Materials Science +17

2 W/mm output power density at 1 GHz for diamond FETs

Makoto Kasu, K. Ueda, Haitao Ye et al. · Electronics Letters · 2005 · 146 citations

Engineering, Electrical Engineering, Materials Science +17

Diamond surface-channel FET structure with 200 V breakdown voltage

P. Gluche, A. Aleksov, Andrei Vescan et al. · IEEE Electron Device Letters · 1997 · 104 citations

Engineering, Electrical Engineering, Microelectronics +13