Takeyasu Saito

Leakage current analysis of diamond Schottky barrier diode

Hitoshi Umezawa, Takeyasu Saito, Norio Tokuda et al. · Applied Physics Letters · 2007 · 136 citations

Leakage Current Analysis, Electrical Engineering, Semiconductor Device +12

High-Speed Through Silicon Via(TSV) Filling Using Diallylamine Additive

Tarō Hayashi, Kazuo Kondo, Takeyasu Saito et al. · Journal of The Electrochemical Society · 2011 · 65 citations

Engineering, High-speed Copper Electrodeposition, High Throughput +18

High Speed Through Silicon Via Filling by Copper Electrodeposition

Kazuo Kondo, Yushi Suzuki, Takeyasu Saito et al. · Electrochemical and Solid-State Letters · 2010 · 58 citations

Engineering, High Throughput, Silicon On Insulator +18

Formation of electroless barrier and seed layers in a high aspect ratio through-Si vias using Au nanoparticle catalyst for all-wet Cu filling technology

Fumihiro Inoue, Tomohiro Shimizu, Takumi Yokoyama et al. · Electrochimica Acta · 2011 · 53 citations

Materials Science, Materials Engineering, Engineering +10

Halogenation and butylation of diamond surfaces by reactions in organic solvents

Yoshinori Ikeda, Takeyasu Saito, Katsuki Kusakabe et al. · Diamond and Related Materials · 1998 · 42 citations

Materials Science, Diamond-like Carbon, Engineering +8