High Speed Through Silicon Via Filling by Copper Electrodeposition

Abstract

High speed copper electrodeposition is needed to achieve the through silicon via (TSV) process with a high throughput. To inhibit electrodeposition on the top surface of the TSV, octadecanthiol (ODT) was microcontact-printed on the top surface. The ODT microcontact-printing effectively inhibits copper electrodeposition on the top surface. With sulfonated diallyl dimethyl ammonium chloride copolymer (SDDACC), V shapes were formed in the via cross section, and these shapes led to bottom-up via filling. We succeeded in filling diameter and deep vias within 37 min. This was achieved by shortening the off time to 100 ms, ODT microcontact-printing, and adding 1 mg/L SDDACC additive.